- Diode: simple P-N junction.
- Forward Bias: allows current to flow from P to N.
- Reverse Bias: no current allowed to flow from N to P.
- Breakdown Voltage: sufficient N to P voltage of a Zener Diode will allow for current to flow in this direction.
3 adjacent regions of doped Si (each connected to a lead): - 3 adjacent regions of doped Si (each connected to a lead):
- Base. (thin layer,less doped).
- Collector.
- Emitter.
- 2 types of BJT:
- Most common: npn (focus on it).
Bipolar Junction Transistor (BJT)
npn bipolar junction transistor
pnp bipolar junction transistor
Developed by Shockley (1949)
- 1 thin layer of p-type, sandwiched between 2 layers of n-type.
- N-type of emitter: more heavily doped than collector.
- With VC>VB>VE:
- Base-Emitter junction forward biased, Base-Collector reverse biased.
- Electrons diffuse from Emitter to Base (from n to p).
- There’s a depletion layer on the Base-Collector junction no flow of e- allowed.
- BUT the Base is thin and Emitter region is n+ (heavily doped) electrons have enough momentum to cross the Base into the Collector.
- The small base current IB controls a large current IC
BJT NPN Transistor
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