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Y. M. Kim, M. Urteaga, M. Dahlström, M. J. W. Rodwell, A. C. Gossard Department of Electrical Engineering, Materials Department
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tarix | 06.03.2018 | ölçüsü | 553 b. | | #30676 |
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200 GHz fmax, fInP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors on GaAs Substrates Y.M. Kim, M. Urteaga, M. Dahlström, M.J.W. Rodwell, A.C. Gossard
Morphology & RHEED of metamorphic layer
Simulation of HBT Junction Temperature vs. Buffer Layer Thermal Conductivity
Experimental Measurement of Temperature Rise
Structure of metamorphic M-DHBT
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